Intel and SoftBank have partnered up for the development of a stacked DRAM (dynamic random-access memory) alternative for HBM (high-bandwidth memory).

Saimemory’s prototype will use Intel technology as well as patents from Japanese academia, including the University of Tokyo. This innovation could reshape the global memory chip market.

The initiative will be led by a new company called Saimemory, with a prototype expected within two years, and commercialization targeted before 2030. Too little too late?

Saimemory is not the first to experiment with 3D stacked DRAM; Samsung has announced plans for 3D stacked DRAM in 2024, and NEO Semiconductor is also working on developing 3D X-DRAM.

However, Saimemory's pursuit of a stacked DRAM chip with distinct architecture and lower power consumption aims to carve out a new market dynamic, diverging from South Korea's HBM stronghold.

Intel's strategic moves in AI, including the Saimemory partnership and product roadmap, position it well to regain share in key markets. While foundry losses persist, ...

June 2 - SoftBank Group (SFTBY) and Intel (NASDAQ:INTC) are partnering to launch a new memory chip company called Saimemory, aimed at developing next-generation DRAM for artificial intelligence ...

Saimemory’s focus on developing a more power-efficient alternative aims to address these challenges, potentially enhancing AI data center performance and sustainability.

Saimemory will handle design and intellectual property, while outsourcing production, in a move that may support Japan's efforts to regain a foothold in the global chip race. The companies say the ...