Abstract: We investigate a novel In 0.53 Ga 0.47 As/Al 0.85 Ga 0.15 As 0.56 Sb 0.44 (hereafter InGaAs/AlGaAsSb) avalanche photodiode (APD) for high speed operation. The fabricated APD with 20 μm ...

This paper proposes a temperature compensation method for APD operating under high voltage. The temperature compensation circuit designed by using a linear regulator and a temperature sensor can ...