Abstract: High-temperature operation of the p-GaN gate high-electron-mobility transistor (HEMT) was investigated, specifically up to 500 °C. The p-GaN gate HEMT demonstrated stable behavior with ...
Abstract: This paper investigates a mainstream metal 3-D printing technique (i.e., direct metal laser sintering of stainless steel {SS} 316L) and two relatively new metal additive manufacturing ...
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