A major breakthrough at Peking University might have just found the first step beyond silicon for semiconductors.
China’s latest 2D chip breakthrough at Peking University introduces a transistor that outperforms 3 nm silicon chips ...
[SMM Report: South China to Conduct Public Tender for 200 mt of Bismuth Ingots in Nandan, Guangxi] SMM, March 13: According to official information obtained by SMM, South China Metals Co., Ltd. in ...
On March 13, the stock price of Xingye Silver Tin dropped slightly. As of 11:16 on March 13, it fell by 0.81%, closing at ...
Chinese scientists have recently succeeded in creating single-atom-layer metals with a thickness of just one 200,000th ...
By way of example, TSMC's N3E node as used in the latest Apple chips has gate pitch of at minimum 45 nm and a metal pitch of ...
Tom's Hardware on MSN1d
Chinese university designed 'world's first silicon-free 2D GAAFET transistor,' claims new bismuth-based tech is both the fastest and lowest-power transistor yetPeking University has published its findings on a wafer-scale 2D GAAFET in Nature, pointing a new path into the Angstrom era ...
Sheets of bismuth, gallium, indium, tin and lead can now be made just a few atoms thick by crushing them at a high temperature and pressure between two sapphires ...
Javier Sanchez-Yamagishi, a physicist who studies 2D materials at the University of California, Irvine, likens the ...
Peking University researchers have developed a 2D transistor that operates 40% faster and uses 10% less energy than leading silicon chips.
The team, led by Peking University Professor Peng Hailin, has developed a self-engineered 2D transistor. The innovative ...
Electronic devices rely on materials whose electrical properties change with temperature, making them less stable in extreme ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback